S. Nagahama

发表

Characterization of AlInGaN-based 405nm distributed feedback laser diodes

Takashi Mukai, Tomoya Yanamoto, Shingo Masui, 2008, SPIE OPTO.

Current status and future prospects of GaN-based LEDs and LDs

Takashi Mukai, Masahiko Sano, Tomoya Yanamoto, 2004 .

GaN‐Based Light‐Emitting Diodes and Laser Diodes, and Their Recent Progress

Takashi Mukai, Masahiko Sano, Hiroaki Matsumura, 2001 .

High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Takashi Mukai, Shuji Nakamura, S. Nagahama, 1995 .

InGaN/GaN/AlGaN-Based Leds and Laser Diodes

Takashi Mukai, Shuji Nakamura, S. Nagahama, 1998 .

Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate

Takashi Mukai, Shingo Masui, S. Nagahama, 2007 .

InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

Expanding Emission Wavelength on Nitride Light-Emitting Devices

Takashi Mukai, Masahiko Sano, Tomoya Yanamoto, 2002 .

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Toshio Matsushita, S. Nagahama, 1997 .

InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

Shuji Nakamura, Toshio Matsushita, S. Nagahama, 1996 .

InGaN/GaN/AlGaN-Based Leds and Laser Diodes

Takashi Mukai, Shuji Nakamura, S. Nagahama, 1999 .