K. Inoh

FBC (Floating Body Cell) for embedded DRAM on SOI

Hiroaki Yamada, Takashi Ohsawa, Hidemi Ishiuchi, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Highly scalable FBC (Floating Body Cell) with 25nm BOX structure for embedded DRAM applications

Akihiro Nitayama, Takashi Ohsawa, Takeshi Hamamoto, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

A memory using one-transistor gain cell on SOI(FBC) with performance suitable for embedded DRAM's

Hiroaki Yamada, Takashi Ohsawa, Takeshi Hamamoto, 2003, 2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408).

A Floating Body Cell (FBC) fully Compatible with 90nm CMOS Technology Node for Embedded Applications

Atsushi Sakamoto, Akihiro Nitayama, Takashi Ohsawa, 2006, 2006 IEEE International Conference on IC Design and Technology.

A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its Scalability

Atsushi Sakamoto, Akihiro Nitayama, Takashi Ohsawa, 2007, IEEE Transactions on Electron Devices.

An 18.5ns 128MB SOI DRAM with a floating body cell

Takashi Ohsawa, Shigeyoshi Watanabe, Takeshi Hamamoto, 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

A floating body cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM

Atsushi Sakamoto, Akihiro Nitayama, Takashi Ohsawa, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..