B.H. Calhoun

Static noise margin variation for sub-threshold SRAM in 65-nm CMOS

A.P. Chandrakasan, B.H. Calhoun, B. Calhoun, 2006, IEEE Journal of Solid-State Circuits.

Techniques to Extend Canary-Based Standby $V_{DD}$ Scaling for SRAMs to 45 nm and Beyond

Jiajing Wang, B.H. Calhoun, 2008, IEEE Journal of Solid-State Circuits.

Statistical modeling for the minimum standby supply voltage of a full SRAM array

Jiajing Wang, B.H. Calhoun, R.A. Rutenbar, 2007, ESSCIRC 2007 - 33rd European Solid-State Circuits Conference.

Modeling and sizing for minimum energy operation in subthreshold circuits

A. Wang, A. Chandrakasan, B.H. Calhoun, 2005, IEEE Journal of Solid-State Circuits.

A 256-kb 65-nm Sub-threshold SRAM Design for Ultra-Low-Voltage Operation

A.P. Chandrakasan, B.H. Calhoun, B. Calhoun, 2007, IEEE Journal of Solid-State Circuits.

A leakage reduction methodology for distributed MTCMOS

A.P. Chandrakasan, B.H. Calhoun, F.A. Honore, 2004, IEEE Journal of Solid-State Circuits.

A capacitance-based whisker-like artificial sensor for fluid motion sensing

B.H. Calhoun, J.B. Stocking, W.C. Eberhardt, 2010, 2010 IEEE Sensors.

Standby power reduction using dynamic voltage scaling and canary flip-flop structures

A.P. Chandrakasan, B.H. Calhoun, 2004, IEEE Journal of Solid-State Circuits.

Ultra-dynamic Voltage scaling (UDVS) using sub-threshold operation and local Voltage dithering

A.P. Chandrakasan, B.H. Calhoun, B. Calhoun, 2006, IEEE Journal of Solid-State Circuits.

Analyzing static noise margin for sub-threshold SRAM in 65nm CMOS

A. Chandrakasan, B.H. Calhoun, B. Calhoun, 2005, Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005..

A 256kb Sub-threshold SRAM in 65nm CMOS

A. Chandrakasan, B.H. Calhoun, B. Calhoun, 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.