Chih-Yuan Chan

High current density InN/AIN heterojunction field-effect transistor with a SiNx gate dielectric layer

S. Hsu, S. Gwo, Yu-Syuan Lin, 2007 .

STI-to-gate distance effects on flicker noise characteristics in 0.13 μm CMOS

S. Hsu, Y. Juang, C. Chan, 2008 .

Impact of STI Effect on Flicker Noise in 0.13-$\mu \hbox{m}$ RF nMOSFETs

Ying-Zong Juang, Chih-Yuan Chan, Yu-Syuan Lin, 2007, IEEE Transactions on Electron Devices.

STI Effect on Flicker Noise in 0.13-μm RF NMOS

Jun-De Jin, Chih-Yuan Chan, Yu-Syuan Lin, 2006, 2006 European Solid-State Device Research Conference.

Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications

Cheng-Kuo Lin, Yu-Syuan Lin, K. Matsushita, 2022, 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Square-Gate AlGaN/GaN HEMTs With Improved Trap-Related Characteristics

Chih-Fang Huang, Chih-Yuan Chan, Yu-Syuan Lin, 2009, IEEE Transactions on Electron Devices.

Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors

S. Hsu, Yu-Syuan Lin, Chih-Yuan Chan, 2007 .