K. Lin

Process dependency of radiation hardness of rapid thermal reoxidized nitrided gate oxides

J. Hwu, W. Lu, K. Lin, 1993 .

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

K. C. Lin, C. H. Liu, P. C. Juan, 2015, Microelectron. Reliab..

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Fu-Chien Chiu, H. W. Chen, Chuan-Hsi Liu, 2008 .

Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics

H. W. Chen, Chuan-Hsi Liu, H. Hsu, 2012 .