R. Li

发表

Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

Alexander A. Balandin, Kang L. Wang, Sergey Morozov, 1999 .

Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

Alexander A. Balandin, Kang L. Wang, Sergey Morozov, 1999 .

Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V

A. Seabaugh, J. Kuo, H. Xing, 2012, 2012 International Electron Devices Meeting.

An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz

Y. Chen, S.C. Martin, R. Smith, 1999, IEEE Electron Device Letters.

An Al Ga N/GaN Undoped Channel Heterostructure Field Effect Transistor with of 107 GHz

R. Smith, K. Boutros, J. Redwing, 1999 .

Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation

H. B. Yao, D. Chi, S.J. Lee, 2007, 2007 International Workshop on Junction Technology.

Resonant-cavity-enhanced high-speed Si photodiode grown by epitaxial lateral overgrowth

C. Schow, J. Denton, J.C. Campbell, 1999, IEEE Photonics Technology Letters.

Investigation of flicker noise and deep-levels in GaN/AlGaN transistors

Alexander A. Balandin, Kang L. Wang, M. Wojtowicz, 2000 .

Flicker Noise in GaN/Al Ga N Doped Channel Heterostructure Field Effect Transistors

Alexander A. Balandin, V. Ramgopal Rao, Kang L. Wang, 1998 .

Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors

V. Rao, C. Viswanathan, A. Balandin, 1998, IEEE Electron Device Letters.

Flicker noise in GaN/Al0.15Ga0.85N doped channel heterostructure field effect transistors

Kang L. Wang, Shengqiang Cai, C. R. Viswanathan, 1998 .

Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

Kang L. Wang, Hongwen Jiang, S. Cai, 1998 .

High-speed polysilicon resonant-cavity photodiode with SiO/sub 2/-Si Bragg reflectors

J.C. Campbell, H. Nie, C. Schow, 1997, IEEE Photonics Technology Letters.

High performance AlGaN/GaN HEMT with improved ohmic contacts

Y. L. Chen, Kang L. Wang, S. Thomas, 1998 .

Annealing behavior of a proton irradiated Al{sub x}Ga{sub 1{minus}x}N/GaN high electron mobility transistor grown by MBE

S. Cai, R. Li, S. J. Cai, 2000 .

In-situ characterization of thin films by the focused ion beam

Kang L. Wang, G. Stupian, M. Pak, 2000 .