B. Neinhus

Investigation of compact models for RF noise in SiGe HBTs by hydrodynamic device simulation

R.W. Dutton, C. Jungemann, B. Neinhus, 2004, IEEE Transactions on Electron Devices.

Compact modeling of drain and gate current noise for RF CMOS

L.F. Tiemeijer, R.J. Havens, A.J. Scholten, 2002, Digest. International Electron Devices Meeting,.

HYDRODYNAMIC MODELING OF RF NOISE FOR SILICON-BASED DEVICES

Christoph Jungemann, Bernd Meinerzhagen, B. Neinhus, 2003 .

Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile

Christoph Jungemann, Bernd Meinerzhagen, B. Neinhus, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

Christoph Jungemann, Bernd Meinerzhagen, B. Neinhus, 2002 .

A robust curve tracing scheme for the simulation of bipolar breakdown characteristics with nonlocal impact ionization models

B. Neinhus, B. Meinerzhagen, S. Decker, 1999, 29th European Solid-State Device Research Conference.

Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and, HD models based on MC generated noise parameters

C. Jungemann, B. Neinhus, B. Meinerzhagen, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

A CPU Efficient Electron Mobility Model for MOSFET Simulation with Quantum Corrected Charge Densities

C. Jungemann, B. Neinhus, B. Meinerzhagen, 2000, 30th European Solid-State Device Research Conference.

Hydrodynamic modeling of RF noise in CMOS devices

L.F. Tiemeijer, C. Jungemann, B. Neinhus, 2003, IEEE International Electron Devices Meeting 2003.

Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs

Christoph Jungemann, Bernd Meinerzhagen, B. Neinhus, 2001 .