Daniel S. Schneider

Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN

G. Fiori, A. Radenović, A. Kis, 2022, Advanced Electronic Materials.

Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

A. Vescan, A. Kis, D. Neumaier, 2022, Advanced materials.

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

G. Fiori, G. Iannaccone, A. Radenović, 2023, 2304.01177.