Sungho Jang

70nm DRAM technology for DDR-3 application

Hyungtak Kim, Sangho Kim, Kinam Kim, 2005, IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..

Improvement of the tail component in retention time distribution using buffered n-implantation with tilt and rotation (BNITR) for 0.2 um DRAM cell and beyond

Jongmin Kim, Ho-Yup Kwon, Sungho Jang, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Lateral-Extended (LatEx.) active for improvement of data retention time for sub 60nm DRAM era

Junho Lee, Ilgweon Kim, Gyoyoung Jin, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Through-focus spot shaping with asymmetric pupil optimization for laser stealth dicing

Youngchul Kwon, Akinori Ohkubo, Sungho Jang, 2021, Optical Engineering + Applications.