Ying Zhang

A 1.1 GHz 12 $\mu$A/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications

Pramod Kolar, Uddalak Bhattacharya, Fatih Hamzaoglu, 2008, IEEE Journal of Solid-State Circuits.

Intel 22nm FinFET (22FFL) Process Technology for RF and mm Wave Applications and Circuit Design Optimization for FinFET Technology

K. Phoa, B. Sell, S. Ravikumar, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Design-Technology Co-Optimization of Standard Cell Libraries on Intel 10nm Process

Peng Zheng, Ying Zhang, Simeon Realov, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).