K. S. Choi

Programming disturbance and cell scaling in phase change memory: For up to 16nm based 4F2 cell

H.J. Kim, Y.S. Son, J.H. Kim, 2010, 2010 Symposium on VLSI Technology.

Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond

K. S. Choi, S. H. Lee, H. C. Park, 2011, 2011 International Electron Devices Meeting.