Pierre Fazan

Cost Effective FinFET Platform for Stand Alone DRAM 1Y and Beyond Memory Periphery

Barry O'Sullivan, Neha Sharan, Bertrand Parvais, 2018, 2018 IEEE International Memory Workshop (IMW).

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs

Anabela Veloso, Marc Aoulaiche, Cor Claeys, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices

Naoto Horiguchi, Dimitri Linten, Tibor Grasser, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).