Xiangwei Jiang

发表

Short-Wave Near-Infrared Linear Dichroism of Two-Dimensional Germanium Selenide.

Huanli Dong, Lang Jiang, Yongtao Li, 2017, Journal of the American Chemical Society.

Petascale Orbital-Free Density Functional Theory Enabled by Small-Box Algorithms.

Lin-wang Wang, E. Carter, Mohan Chen, 2016, Journal of chemical theory and computation.

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Runsheng Wang, Zixuan Sun, Zhuoqing Yu, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Yin Wang, David Wei Zhang, Yaochen Sheng, 2019, ACS Applied Electronic Materials.

A comparative study for quantum transport calculations of nanosized field-effect transistors

Lin-wang Wang, Shu-Shen Li, Xiangwei Jiang, 2012 .

Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation

Lin-wang Wang, Shu-Shen Li, Xiangwei Jiang, 2010, 1011.0537.

Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods

Lin-wang Wang, Jun-Wei Luo, Shu-Shen Li, 2009 .

An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors

Lin-wang Wang, Shu-Shen Li, Zhi Wang, 2014 .

A small box Fast Fourier Transformation method for fast Poisson solutions in large systems

Lin-Wang Wang, Xiangwei Jiang, Shu-Shen Li, 2013, Comput. Phys. Commun..

Ab initio quantum transport calculations using plane waves

Lin-wang Wang, A. Garcia-Lekue, M. G. Vergniory, 2015 .

Large scale ZrS2 atomically thin layers

Yan Li, Jingbo Li, Zhongming Wei, 2016 .

Phase-selective synthesis of 1T′ MoS2 monolayers and heterophase bilayers

Qian Wang, Lin Gu, Xiaozhi Liu, 2018, Nature Materials.

PDECO: Parallel differential evolution for clusters optimization

Zhanghui Chen, Xiangwei Jiang, Shu-Shen Li, 2013, J. Comput. Chem..

Gate‐Tunable Ultrahigh Photoresponsivity of 2D Heterostructures Based on Few Layer MoS2 and Solution‐Processed rGO

Yan Li, Jingbo Li, Zhongming Wei, 2015 .

Influence of the interface structure and strain on the rectification performance of lateral MoS2/graphene heterostructure devices.

Xiangwei Jiang, Shenyuan Yang, J. Gong, 2022, Physical chemistry chemical physics : PCCP.

Improved Performance in GeSn/SiGeSn TFET by Hetero-Line Architecture With Staggered Tunneling Junction

Y. Hao, G. Han, Jincheng Zhang, 2019, IEEE Transactions on Electron Devices.

Theoretical investigation of backgate-biasing effects on ultrathin-body GeSn based tunneling FET

Y. Hao, G. Han, Jincheng Zhang, 2017, 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction

Y. Hao, G. Han, Chunfu Zhang, 2017 .

Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs

Jun Luo, Ling Li, Guofu Zhou, 2020 .

High-performance magnetic tunnel junctions based on two-dimensional Bi2O2Se

Zhongming Wei, Yue-Yang Liu, Yixin Zong, 2021 .

Designing a porous-crystalline structure of β-Ga2O3: a potential approach to tune its opto-electronic properties.

Lin-wang Wang, Swastika Banerjee, Xiangwei Jiang, 2018, Physical chemistry chemical physics : PCCP.

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory.

Lin-wang Wang, Runsheng Wang, Jiezhi Chen, 2021, ACS applied materials & interfaces.

Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations

Lin-wang Wang, Jun Luo, Runsheng Wang, 2019, Physical Review Applied.

Ab Initio Investigation of Charge Trapping Across the Crystalline- Si –Amorphous- SiO2 Interface

Lin-wang Wang, Jun Luo, F. Zheng, 2019, Physical Review Applied.

Comprehensive investigations on charge diffusion physics in SiN-based 3D NAND flash memory through systematical Ab initio calculations

Dan Han, Jiezhi Chen, Xiangwei Jiang, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Electron energy and angle distribution of GaAs photocathodes

Lin-wang Wang, Jingbo Li, Shu-Shen Li, 2013 .

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Z. Fan, Peizhi Liu, V. Bouchiat, 2017, Nature Communications.

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

Shu-Shen Li, Xiangwei Jiang, Xiangwei Jiang, 2014 .

Piezoelectric Tunnel FET With a Steep Slope

Jun Z. Huang, N. Xu, Ru Huang, 2020, IEEE Electron Device Letters.

Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals

Ming Liu, Yeliang Wang, Hongjun Gao, 2020, Nature Communications.

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

Lin-wang Wang, Runsheng Wang, S. Meng, 2021, Physical Review B.

Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors

W. Liwei, Yunfei En, Zhi Wang, 2017 .

Quantum mechanical simulations of nano-structures and nano-devices

Lin-wang Wang, Jun-Wei Luo, Shu-Shen Li, 2012, 2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

Shu-Shen Li, Xiangwei Jiang, 2012 .

A fully 3D atomistic quantum mechanical study on random dopant induced effects in 25nm MOSFETs

Lin-wang Wang, Jun-Wei Luo, Shu-Shen Li, 2008 .

Multiple valley couplings in nanometer Si metal–oxide–semiconductor field-effect transistors

Lin-wang Wang, Jun-Wei Luo, Shu-Shen Li, 2008 .

A Fully Three-Dimensional Atomistic Quantum Mechanical Study on Random Dopant-Induced Effects in 25-nm MOSFETs

Lin-wang Wang, Jun-Wei Luo, Shu-Shen Li, 2008, IEEE Transactions on Electron Devices.

D atomistic quantum mechanical study on random dopant induced effects in 25 nm MOSFETs Permalink

Lin-wang Wang, Jun-Wei Luo, Shu-Shen Li, 2008 .

An efficient mechanism for enhancing the thermoelectricity of nanoribbons by blocking phonon transport in 2D materials

Yue-Yang Liu, Pin-Zhen Jia, Yunling Zeng, 2018, Journal of physics. Condensed matter : an Institute of Physics journal.

Anharmonic multi-phonon nonradiative transition: An ab initio calculation approach

Lin-wang Wang, Shu-Shen Li, Xiangwei Jiang, 2020, Science China Physics, Mechanics & Astronomy.

Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.

Jiezhi Chen, Z. Fan, Shenyuan Yang, 2018, Physical chemistry chemical physics : PCCP.

MoS2 dual-gate transistors with electrostatically doped contacts

David-Wei Zhang, Qingqing Sun, P. Zhou, 2019, Nano Research.

Atomic defects in monolayer WSe2 tunneling FETs studied by systematic ab initio calculations

Jiezhi Chen, Z. Fan, Jixuan Wu, 2018 .

Nanoelectromechanical Switches by Controlled Switchable Cracking

Jeongmin Hong, L. You, Xiaofei Yang, 2019, IEEE Electron Device Letters.

Ultra-Low Power Nano-electromechanical Switch Realized by Controlled and Reversible Crack

N. Xu, Jeongmin Hong, L. You, 2018, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

SGO: A fast engine for ab initio atomic structure global optimization by differential evolution

Weile Jia, Lin-Wang Wang, Zhanghui Chen, 2016, Comput. Phys. Commun..

Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors.

Jiezhi Chen, Z. Fan, Jun-Wei Luo, 2018, ACS applied materials & interfaces.

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Zheng Han, Jian-Hao Chen, Zhi-Qiang Fan, 2017, Nature Communications.

Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX3 (X = Br, I) monolayers.

Jingbo Li, Zhongming Wei, J. Xia, 2018, Nanoscale.

Large-scale first-principles quantum transport simulations using plane wave basis set on high performance computing platforms

Lin-Wang Wang, Xiangwei Jiang, Meng Ye, 2021, Comput. Phys. Commun..

Diamine anchored molecular junctions of oligo(phenylene ethynylene) cruciform

M. Nielsen, Zhongming Wei, Jingbo Li, 2017 .

Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs

N. Xu, Y. Hao, D. Esseni, 2018, IEEE Electron Device Letters.

Tunable Electronic Structures of GeSe Nanosheets and Nanoribbons

Z. Fan, Jun-Wei Luo, Zhongming Wei, 2017 .

Two dimensional Schottky contact structure based on in-plane zigzag phosphorene nanoribbon

Weikang Sun, Z. Fan, Jun-Wei Luo, 2017 .

Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects

Lin-wang Wang, N. Xu, Y. Hao, 2014 .

Charge transport and quantum confinement in MoS2 dual-gated transistors

David-Wei Zhang, Qingqing Sun, P. Zhou, 2020, Journal of Semiconductors.

Polarized photodetectors based on two-dimensional semiconductors

Zhongming Wei, K. Zhao, Xiangwei Jiang, 2019, Science China Physics, Mechanics & Astronomy.

Short-Wave Near-Infrared Linear Dichroism of Two-Dimensional Germanium Selenide.

Huanli Dong, Lang Jiang, Yongtao Li, 2017, Journal of the American Chemical Society.

Redox control of magnetic transport properties of a single anthraquinone molecule with different contacted geometries

Mengqiu Long, Weikang Sun, Z. Fan, 2017 .

In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Lin-wang Wang, Jun Luo, Z. Fan, 2017 .

Effect of room temperature lattice vibration on the electron transport in graphene nanoribbons

Shi-Zhang Chen, Bo-Lin Li, Yue-Yang Liu, 2017 .

Schottky-barrier modulation at germanium/monolayer MoS2 heterojunction interface: the roles of passivation and interfacial layer

Jiezhi Chen, Xiaolei Ma, Yuan Li, 2020, Applied Physics Express.

Multiscale simulation of lateral charge loss in Si3N4 3D NAND flash based on density functional theory

Jiezhi Chen, Xiangwei Jiang, Jixuan Wu, 2019, Journal of Physics D: Applied Physics.

Giant decreasing of spin current in a single molecular junction with twisted zigzag graphene nanoribbon electrodes

Z. Fan, Zhongming Wei, Shu-Shen Li, 2016 .