Hyeonggon Kim

发表

A 21nm high performance 64Gb MLC NAND flash memory with 400MB/s asynchronous toggle DDR interface

Young-Hyun Jun, Jinho Ryu, Young-Ho Lim, 2011, 2011 Symposium on VLSI Circuits - Digest of Technical Papers.

A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications

Jeong-Don Ihm, Yunhee Choi, Kwangwon Kim, 2017, 2017 Symposium on VLSI Circuits.

P-46: A Low Power Slew Rate Enhancement Method For the Mobile TFT Source Driver Amplifier

Junghun Kim, Youn-Ho Choi, Byeong-Cheol Kim, 2005 .