Scott Roy

发表

A Methodology for Quantitatively Introducing ‘Atomistic’ Fluctuations into Compact Device Models for Circuit Analysis

Asen Asenov, Gareth Roy, Scott Roy, 2003 .

RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation

Asen Asenov, John R. Barker, Savas Kaya, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

Low power, high density CMOS 6-T SRAM cell design subject to 'atomistic' fluctuations

Asen Asenov, Scott Roy, B. Cheng, 2007 .

Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation

Asen Asenov, Andrew R. Brown, Binjie Cheng, 2006 .

Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants

Asen Asenov, B. Cheng, Scott Roy, 2006 .

Parallel semiconductor device simulation: from power to 'atomistic' devices

Asen Asenov, Scott Roy, A. R. Brown, 1998, 1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116).

The impact of random dopant effects on SRAM cells

Asen Asenov, Scott Roy, A. Asenov, 2004 .

Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs

Asen Asenov, Andrew R. Brown, Binjie Cheng, 2009, ESSDERC 2009.

IMPACT OF INTRINSIC PARAMETER FLUCTUATIONS IN NANO-CMOS DEVICES ON CIRCUITS AND SYSTEMS

Asen Asenov, Binjie Cheng, Scott Roy, 2007 .

Self-consistent particle simulation of ion channels

Asen Asenov, C. Millar, Scott Roy, 2005 .

Impact of strain on the performance of high-k/metal replacement gate MOSFETs

Asen Asenov, Scott Roy, Xingsheng Wang, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study

Sharief F. Babiker, Asen Asenov, Scott Roy, 1999 .

Impact of body thickness fluctuations in nanometer scale UTB SOI MOSFETs on SRAM cell functionality

Asen Asenov, B. Cheng, Scott Roy, 2005 .

Random Telegraph Noise in 30 nm FETs with Conventional and High-κ Dielectrics

Asen Asenov, Andrew R. Brown, Scott Roy, 2004 .

Capacitance variability of short range interconnects

Timothy D. Drysdale, Asen Asenov, Andrew R. Brown, 2008 .

Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study

Asen Asenov, Andrew R. Brown, Fikru Adamu-Lema, 2007 .

Compact model strategy for studying the impact of intrinsic parameter fluctuations on circuit performance

Asen Asenov, B. Cheng, Scott Roy, 2004 .

Bipolar quantum corrections in resolving individual dopants in ‘atomistic’ device simulation

Asen Asenov, Andrew R. Brown, Gareth Roy, 2003 .

Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants

Asen Asenov, Andrew R. Brown, Binjie Cheng, 2007 .

Quantum Aspects of Resolving Discrete Charges in ‘Atomistic’ Device Simulations

Asen Asenov, Andrew R. Brown, Gareth Roy, 2003 .

Bipolar quantum corrections in resolving individual dopants in atomistic, intrinsic parameter fluctuations into compact model circuit analysis

Asen Asenov, Gareth Roy, Scott Roy, 2003 .

Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation

Asen Asenov, Andrew R. Brown, Scott Roy, 2003 .

Electromagnetic radiation from ingested sources in the human intestine

David R. S. Cumming, Scott Roy, L. C. Chirwa, 2002, 2nd Annual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine and Biology. Proceedings (Cat. No.02EX578).

Intrinsic parameter fluctuations in conventional MOSFETs until the end of the ITRS: A statistical simulation study

Asen Asenov, Andrew R. Brown, Gareth Roy, 2006 .

Scaling study of Si/SiGe MODFETs for RF applications

Asen Asenov, John R. Barker, Jeremy R. Watling, 2002, The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications.