H. Boudinov

Ultrafast trapping times in ion implanted InP

L. Dao, B. Luther-Davies, H. Tan, 2002 .

Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition

B. Sernelius, M. A. Toloza Sandoval, A. Ferreira da Silva, 2020, 2009.06046.

SiC Nitridation by NH3 Annealing and Its Effects in MOS Capacitors with Deposited SiO2 Films

A. Gobbi, F. Stedile, H. Boudinov, 2015, Journal of Electronic Materials.

Metal-nonmetal transition and resistivity of silicon implanted with bismuth

E. Abramof, B. Sernelius, A. Silva, 1997 .