Hisashi Kaneko

A semiconductor device having an improved wiring structure and methods of manufacturing this semiconductor device

Nobuo Hayasaka, Junichi Wada, Hisashi Kaneko, 1993 .

The Development of Highly Reliable Interconnections for ULSI.

Hiroshi Toyoda, Hisashi Kaneko, Masahiko Hasunuma, 1996 .

A newly developed model for stress induced slit-like voiding

Hisashi Kaneko, M. Miyauchi, Takashi Kawanoue, 1990, 28th Annual Proceedings on Reliability Physics Symposium.

Electromigration in a single crystalline submicron width aluminum interconnection

Shoso Shingubara, Yasushi Nakasaki, Hisashi Kaneko, 1991 .

Electromigration-induced abrupt changes in electrical resistance associated with void dynamics in aluminum interconnections

Shoso Shingubara, Hisashi Kaneko, S. Shingubara, 1991 .

EM lifetime improvement of Cu damascene interconnects by p-SiC cap layer

M. Hatano, Hisashi Kaneko, Y. Shimooka, 2002, Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).

Single crystal aluminum lines with excellent endurance against stress induced failure

Hisashi Kaneko, M. Miyauchi, Takashi Kawanoue, 1989, International Technical Digest on Electron Devices Meeting.

Significant improvement in electromigration of reflow-sputtered Al-0.5wt%Cu/Nb-liner dual damascene interconnects with low-k organic SOG dielectric

Hisashi Kaneko, Masahiko Hasunuma, Toshiaki Watanabe, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams

Kenichi Ito, Hiroshi Toyoda, Hisashi Kaneko, 2007 .