K.C. Ryoo

PRAM process technology

S.Y. Lee, J.H. Park, H.S. Jeong, 2004, 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866).

Process technologies for the integration of high density phase change RAM

S.Y. Lee, Kinam Kim, J.H. Park, 2005, 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005..

High density integration of low current phase-change RAM using structural modification based on 0.18 /spl mu/m-CMOS technologies

Y.T. Kim, S.Y. Lee, H.J. Kim, 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

Full integration and reliability evaluation of phase-change RAM based on 0.24 /spl mu/m-CMOS technologies

Y.T. Kim, S.Y. Lee, H.J. Kim, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Full integration and cell characteristics for 64Mb nonvolatile PRAM

S.Y. Lee, Kinam Kim, H.S. Jeong, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Integration technologies for scalable high density MRAM

Jonghyun Park, S.Y. Lee, Kinam Kim, 2005, IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..

Integration and cell characteristics for high density PRAM

J.H. Park, K.N. Kim, S.J. Ahn, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).