T. Yang

发表

Optical thermometry through infrared excited green upconversion emissions in Er3+–Yb3+ codoped Al2O3

Bin Dong, X. J. Wang, B. Dong, 2007 .

Fabrication and properties of B–N codoped p-type ZnO thin films

B. Yao, G. Xing, T. Wu, 2009 .

S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

E. Vogel, P. Ye, Hyunchul Kim, 2008 .

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

P. Ye, Y. Xuan, H. Lin, 2007 .

Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric

Yi Xuan, Robert M. Wallace, Peide D. Ye, 2007 .

Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Huilong Zhu, Yongkui Zhang, Xiaogen Yin, 2020, IEEE Electron Device Letters.

Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

A. Du, H. Yin, Huilong Zhu, 2021, IEEE Transactions on Electron Devices.

Band-to-band and free-carrier absorption coefficients in heavily doped silicon at 4 K and at room temperature

D. Roulston, S. Jain, A. Nathan, 1991 .

High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics

P. Ye, Y. Xuan, Y.Q. Wu, 2007, 2007 IEEE International Electron Devices Meeting.

Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis

J. Bian, Aimin Liu, T. Yang, 2006 .