Luo Jun

A novel 600V structure with Split P-Buried Floating Layer and doping trench

Zhang Jin, Tan Kaizhou, Luo Jun, 2013, 2013 IEEE International Conference of IEEE Region 10 (TENCON 2013).

A 50–60 V Class Ultralow Specific on-Resistance Trench Power MOSFET

Gan Ping, Zhu Zhi, Wu Xinghe, 2012 .

A novel structure for improving the SEGR of a VDMOS

Liu Yong, Luo Jun, Tan Kaizhou, 2012 .