X. Song

Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array

K. Takeuchi, T. Hiramoto, T. Saraya, 2011, IEEE Transactions on Electron Devices.

Impact of DIBL variability on SRAM static noise margin analyzed by DMA SRAM TEG

T. Hiramoto, K. Takeuchi, S. Inaba, 2010, 2010 International Electron Devices Meeting.