M. Jin

Frequency dependent TDDB behaviors and its reliability qualification in 32nm high-k/metal gate CMOSFETs

Hyunjin Kim, Lira Hwang, Minjung Jin, 2011, 2011 International Reliability Physics Symposium.

Systematical study of 14nm FinFET reliability: From device level stress to product HTOL

Hyunjin Kim, Hyunwoo Lee, Yoohwan Kim, 2015, 2015 IEEE International Reliability Physics Symposium.

Reliability on Evolutionary FinFET CMOS Technology and Beyond

H. Shim, Junekyun Park, H. Sagong, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

A systematic study of gate dielectric TDDB in FinFET technology

Hyunjin Kim, Minjung Jin, Hyun-Chul Sagong, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Hot carrier reliability characterization in consideration of self-heating in FinFET technology

Seungjin Choo, Sangwoo Pae, Minjung Jin, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Considering physical mechanisms and geometry dependencies in 14nm FinFET circuit aging and product validations

H. J. Kim, J. J. Kim, S. W. Pae, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance

Taiki Uemura, Soonyoung Lee, Sangwoo Pae, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack

Yoohwan Kim, Minjung Jin, Jinju Kim, 2018, Microelectron. Reliab..

Reliability Assessment of 10nm FinFET Process Technology

Sangwoo Pae, Minjung Jin, Jin Ju Kim, 2018, 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).