Blacksmith Wu

Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition

P. Ren, Runsheng Wang, Kanyu Cao, 2022, IEEE Transactions on Electron Devices.

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation

P. Ren, Runsheng Wang, Zixuan Sun, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

P. Ren, Runsheng Wang, Zirui Wang, 2023, IEEE Electron Device Letters.