Pukhraj Prajapat

发表

Growth of III-nitrides by molecular beam epitaxy: Unconventional substrates for conventional semiconductors

D. Singh, G. Gupta, Pukhraj Prajapat, 2023, Materials Science and Engineering: B.

Self-Driven UVC–NIR Broadband Photodetector with High-Temperature Reliability Based on a Coco Palm-Like MoS2/GaN Heterostructure

S. Walia, Preetam Singh, Pargam Vashishtha, 2023, ACS Applied Electronic Materials.

Highly responsive SnSe/GaN heterostructure-based UVC-SWIR broadband photodetector

M. Kumar, J. Ahmed, V. N. Singh, 2023, Materials Science in Semiconductor Processing.

Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector

Lalit N. Goswami, A. Pandey, Pargam Vashishtha, 2022, Electronic Materials.

Photocurrent Polarity Switching and Enhanced Photoresponse in Silver Nanoparticles Decorated a-GaN-Based Photodetector

S. Sharma, K. Nanda, D. Singh, 2023, ACS Applied Electronic Materials.

Self-driven Vis-NIR broadband photodetector based on nano-hedge-like MoS2/WSe2 heterostructure

Preetam Singh, Pargam Vashishtha, G. Gupta, 2023, Materials Science in Semiconductor Processing.

Strong light-matter interaction and antireflection functionality of f-TiO2/GaN heterostructure broadband photodetector

Lalit N. Goswami, J. Tawale, Preetam Singh, 2023, Journal of Alloys and Compounds.

Fabrication of highly sensitive visible photodetector based on SnS2 Terrazzo-like structure for weak signal detection

Pargam Vashishtha, G. Gupta, Aditya V. Yadav, 2023, Optical Materials.

Fabrication of Sb2Se3-based high-performance self-powered Visible-NIR broadband photodetector

Pargam Vashishtha, G. Gupta, Pukhraj Prajapat, 2024, Materials Science in Semiconductor Processing.

CVD-Grown Monolayer MoS2 and GaN Thin Film Heterostructure for a Self-Powered and Bidirectional Photodetector with an Extended Active Spectrum.

Pargam Vashishtha, J. Tollerud, G. Gupta, 2024, ACS applied materials & interfaces.