J. Zhang

Development of SiC Superjunction MOSFET: A Review

Y. Duan, Pan Liu, Yuan-Lan Zhang, 2023, 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS).

Progress in Silicon Carbide Power Devices

Brett Hull, John Palmour, Mrinal Das, 2006, 2006 64th Device Research Conference.

The benefits and current progress of SiC SGTOs for pulse power applications

A. Agarwal, R. Callanan, C. Scozzie, 2009, 2009 International Semiconductor Device Research Symposium.

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

J. Casady, S. Ryu, B. Hull, 2018, Materials Science Forum.

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .