Y. Lee

Role of hydrogen anneal in thin gate oxide for multi-metal-layer CMOS process

N. Mielke, K. Seshan, R. Nachman, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

Correlation of plasma process induced charging with Fowler-Nordheim stress in p- and n-channel transistors

R. Chau, P. Moon, R. Chau, 1992, 1992 International Technical Digest on Electron Devices Meeting.