N. Shimada

Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

I. Yamada, K. Goto, T. Aoki, 1998 .

Shallow junction formation by polyatomic cluster ion implantation

J. Matsuo, D. Takeuchi, I. Yamada, 1996, Proceedings of 11th International Conference on Ion Implantation Technology.

Boron Diffision in Ultra Low-energy (< lkeV/atom) Decaborane(BloH,$ Ion Implantation

T. Sugii, T. Aoki, J. Matsuo, 1999 .

Boron diffusion in ultra low-energy (<1 keV/atom) decaborane (B/sub 10/H/sub 14/) ion implantation

I. Yamada, K. Goto, T. Aoki, 1998, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).