K. Suemitsu

Etching Magnetic Tunnel Junction with Metal Etchers

Hiromitsu Hada, Keizo Kinoshita, Tadahiko Sugibayashi, 2010 .

Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion

Tetsuhiro Suzuki, N. Ohshima, H. Tanigawa, 2012 .

Thickness dependence of current-induced domain wall motion in a Co/Ni multi-layer with out-of-plane anisotropy

S. Fukami, Tetsuhiro Suzuki, N. Ohshima, 2013 .

Effect of Device Temperature on Domain Wall Motion in a Perpendicularly Magnetized Co/Ni Wire

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2011 .

Operating principle of a three-terminal domain wall device with perpendicularly magnetized Ta/CoFeB/MgO free layer and underlying hard magnets

Tetsuhiro Suzuki, T. Ono, D. Chiba, 2014 .

A 90nm 12ns 32Mb 2T1MTJ MRAM

Yuichi Ito, Hiroaki Honjo, Yosuke Kobayashi, 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets

S. Fukami, S. Ikeda, H. Ohno, 2013, 2013 Symposium on VLSI Technology.

0.1 /spl mu/m-rule MRAM development using double-layered hard mask

K. Nagahara, K. Tsuji, K. Nagahara, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).