Jiaqi Song

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

X. Huang, Puxiang Lai, C. Han, 2021, physica status solidi (a).

Improved electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric by nitrogen incorporation

P. Lai, C. Leung, L. Qian, 2015 .

Investigation into the thermal effects of a Nd:YVO4 crystal at 1342 nm using the bistability-like output characteristics

Huadong Lu, Jing Su, Pixian Jin, 2021 .

Comparative Study of Nb2O5, NbLaO, and La2O3 as Gate Dielectric of InGaZnO Thin-Film Transistor

P. Lai, C. Han, Jiaqi Song, 2016, IEEE Transactions on Electron Devices.

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

R. Yao, P. Lai, Jiezheng Liu, 2017 .