Y.-L. Shen

Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION

W.-F. Wu, C. Wang, C. Su, 2017, 2017 Symposium on VLSI Technology.

Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide

Yao-Jen Lee, C. Hu, P. Sung, 2012, 2012 International Electron Devices Meeting.