K. Komori

A novel EPROM device fabricated using focused boron ion-beam implantation

S. Shukuri, T. Hagiwara, Y. Wada, 1987, IEEE Transactions on Electron Devices.

An 80 ns 1 Mb flash memory with on-chip erase/erase-verify controller

T. Tanaka, Y. Ohji, M. Ushiyama, 1990, 1990 37th IEEE International Conference on Solid-State Circuits.

Process integration of single-wafer technology in a 300-mm fab, realizing drastic cycle time reduction with high yield and excellent reliability

Y. Sasaki, Michimasa Funabashi, K. Nemoto, 2003 .

Nanometer Structure of Gate Electrode/Gate Insulator Interface and Anomalous Voltage Deviation of Tunneling Current in Submicron MOS Devices

Y. Ohji, T. Nishimoto, H. Kume, 1990 .