Shenghong Huang

Spectroscopy of long wavelength coupled quantum dots

H. Ni, X. Dou, Yong-Hua Xiong, 2008 .

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy

Shiyong Zhang, H. Ni, Donghai Wu, 2007 .

Complex quantum ring structures formed by droplet epitaxy

Zhichuan Niu, H. Ni, J. Xia, 2006 .

Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate

S. Krishna, G. Balakrishnan, P. Rotella, 2006, IEEE Journal of Selected Topics in Quantum Electronics.

Growth mode and defect evaluation of GaSb on GaAs substrate: a transmission electron microscopy study.

D. Huffaker, G. Balakrishnan, Shenghong Huang, 2011, Journal of nanoscience and nanotechnology.

Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

M. N. Kutty, G. Balakrishnan, J. Tatebayashi, 2009, IEEE Journal of Selected Topics in Quantum Electronics.