R. Chen

A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications

C.C. Chen, Shien-Yang Wu, S.Y. Chang, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm2 SRAM cells for Mobile SoC and High Performance Computing Applications

Jun He, R. Chen, Geoffrey Yeap, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond

C. O. Chui, M. Chiang, J. Liaw, 2022, 2022 International Electron Devices Meeting (IEDM).

A 16nm FinFET CMOS technology for mobile SoC and computing applications

H. T. Lin, Shien-Yang Wu, T. Miyashita, 2013, 2013 IEEE International Electron Devices Meeting.

Design and Optimization of SRAM Macro and Logic Using Backside Interconnects at 2nm node

A. Jourdain, E. Beyne, A. Veloso, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Demonstration of a sub-0.03 um2 high density 6-T SRAM with scaled bulk FinFETs for mobile SOC applications beyond 10nm node

Shien-Yang Wu, T. Miyashita, C. H. Tsai, 2016, 2016 IEEE Symposium on VLSI Technology.

3D-optimized SRAM Macro Design and Application to Memory-on-Logic 3D-IC at Advanced Nodes

E. Beyne, J. Ryckaert, M. Stucchi, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Enabling Multiple-Vt Device Scaling for CMOS Technology beyond 7nm Node

Vincent S. Chang, S.H. Wang, J.H. Lu, 2020, 2020 IEEE Symposium on VLSI Technology.

A 3nm CMOS FinFlex™ Platform Technology with Enhanced Power Efficiency and Performance for Mobile SoC and High Performance Computing Applications

Shien-Yang Wu, M. Chiang, V. Chang, 2022, 2022 International Electron Devices Meeting (IEDM).