Jin Ho Kim

8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology

Young-Hyun Jun, Dukha Park, Sooho Cha, 2009, IEEE Journal of Solid-State Circuits.

8Gb 3D DDR3 DRAM using through-silicon-via technology

So-Ra Kim, Hoon Lee, Tae-Kyung Jung, 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

18.3 A 1.2V 64Gb 8-channel 256GB/s HBM DRAM with peripheral-base-die architecture and small-swing technique on heavy load interface

Kyung Whan Kim, Jae-Hwan Kim, Jun Hyun Chun, 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).