G. Tang

High-quality In0.53Ga0.47As on exactly (001)-oriented Si grown by metal-organic vapour-phase epitaxy

H. Wehmann, A. Schlachetzki, E. Peiner, 1997 .

Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits

H. Wehmann, A. Schlachetzki, E. Peiner, 1994 .

InP on Si substrates characterized by spectroscopic ellipsometry

H. Wehmann, A. Schlachetzki, G. Zwinge, 1993 .

The influence of a hydride preflow on the crystalline quality of InP grown on exactly oriented (100)Si

E. Bugiel, P. Zaumseil, H. Wehmann, 1992 .

A new maskless selective‐growth process for InP on (100) Si

H. Wehmann, A. Schlachetzki, E. Peiner, 1992 .

Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta2NiSe7

Ying Liu, Z. Mao, G.-P. Tang, 2018, Applied Physics Letters.

Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems

H. Wehmann, A. Schlachetzki, G. Tang, 1993 .