J. Merrett

发表

Design and fabrication of planar guard ring termination for high-voltage SiC diodes

John D. Cressler, David C. Sheridan, Charles D. Ellis, 2000 .

High conductivity β-Ga2O3 formed by hot Si ion implantation

S. Dhar, R. Comes, T. Asel, 2022, Applied Physics Letters.

SiC nanowire vapor–liquid–solid growth using vapor-phase catalyst delivery

A. Davydov, J. N. Merrett, Y. Koshka, 2013 .

Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates

A. Davydov, I. Levin, S. Sundaresan, 2012 .

Growth on Differently Oriented Sidewalls of SiC Mesas As a Way of Achieving Well-Aligned SiC Nanowires

A. Davydov, J. N. Merrett, Y. Koshka, 2012 .

Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates

A. Davydov, I. Levin, S. Sundaresan, 2011 .

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications

Siva Kotamraju, Y. Koshka, B. Krishnan, 2012 .

Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth

Siva Kotamraju, G. Melnychuk, J. N. Merrett, 2010 .

A Review of SiC Power Switch: Achievements, Difficulties and Perspectives

Janna R. B. Casady, J. Casady, W. Draper, 2004 .

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

J. Neil Merrett, J. B. Dufrene, J. Casady, 2003 .

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

G. Melnychuk, Y. Koshka, B. Krishnan, 2010 .