R. Takeda

Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory

T. Shimizu, K. Takase, N. Iwata, 2012 .

The I‐V characteristics of polycrystalline silicon diodes and the energy distribution of traps in grain boundaries

Yoshihisa Suzuki, H. Kuwano, Yoji Saito, 1992 .

Circuit simulation of a silicon-carbide MOSFET considering the effect of the parasitic elements on circuit boards by using S-parameters

H. Otake, Tatsuya Yanagi, K. Nakahara, 2018, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC).