L. Luo

发表

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Nengtao Wu, Guoqiang Li, Zhiheng Xing, 2023, Semiconductor Science and Technology.

High On/Off Current Ratio and High Vth/Ron Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

Nengtao Wu, Guoqiang Li, B. Cao, 2024, IEEE Transactions on Electron Devices.