Shane Chang

Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application

H. Iwai, K. Kakushima, J. Yao, 2017, IEEE Electron Device Letters.

Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD

Edward Yi Chang, Tien Tung Luong, Yen-Teng Ho, 2017, Microelectron. Reliab..

Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers

Li Chang, T. Luong, Shane Chang, 2017 .

Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films

T. Tseng, S. Kuo, W. Hsieh, 2002 .