J. W. Liang

发表

Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes

H. Yang, Dongshan Zhao, M. Chong, 2006 .

Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

Yuchan Wang, Fei Li, J. Zou, 2009 .

Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

Z. S. Liu, Hui Yang, X. Y. Li, 2006 .

InAs quantum dots in InAlAs matrix on (001)InP substrates grown by molecular beam epitaxy

Z. G. Wang, Baojian Xu, Q. Gong, 1998 .

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

Xiu-yu Li, Hui Yang, H. Gong, 2006 .

Strain evolution in GaN layers grown on high-temperature AlN interlayers

H. Yang, Dongshan Zhao, D. Jiang, 2006 .

The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers

Hongliang Gong, H. Yang, H. Gong, 2006 .

Investigation of {111}A and {111}B planes of c-GaN epilayers grown on GaAs(001) by MOCVD

Hui Yang, Y. Wang, B. Qu, 2001 .

Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates

J. Han, Hui Yang, Xinhe Zheng, 2001 .

X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate

Hui Yang, S. Liu, Y. Wang, 2001 .

Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

Hui Yang, Y. Wang, Xuebin Zheng, 2001 .

Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure

Hui Yang, Y. Wang, B. Qu, 2001 .

Space-charge-limited currents in GaN Schottky diodes

Z. Liu, H. Yang, Degang Zhao, 2005 .

Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD

Hui Yang, Q. Jia, Xin Jiang, 2002 .

The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition

Z. Liu, Hui Yang, J. Zhu, 2008 .

Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films

Hui Yang, D. Jiang, Degang Zhao, 2006 .

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)

H. Yang, J. Zhou, H. Chen, 2003 .

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

Z. Liu, Hui Yang, Dongshan Zhao, 2007 .

The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis

K. Ploog, D. Jiang, H. Yang, 2007 .

Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy

Xunhua Zheng, R. Wang, Cenyao Tang, 2007 .