H. Kim

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

C. Hwang, S. Hyun, M. Park, 2020, Nanoscale Research Letters.

Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory

C. Hwang, S. Hyun, M. Park, 2020, Advanced Electronic Materials.

Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

C. Hwang, S. Hyun, M. Park, 2020 .

2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al 2 O 3 /SrTiO 3 Interface (Adv. Electron. Mater. 6/2020)

C. Hwang, S. Hyun, Hyunjae Lee, 2020 .

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface

Hyun Jae Lee, C. Hwang, S. Hyun, 2020, Advanced Electronic Materials.

Structural anisotropy in Sb thin films

M. Yoon, Joon Sue Lee, P. Adhikari, 2023, APL Materials.