J. L. Leray

发表

Modélisation et simulation numérique de phénomènes activés par la température : Application aux effets post-irradiation (PIE) : Composants électroniques soumis à ridiations

O. Flament, J.-C. Boudenot, C. Chabrerie, 1997 .

Le durcissement des technologies de circuits intégrés : Space radiation and its interaction with materials

J. L. Leray, A. J. Auberton-Herve, 1993 .

Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments

O. Faynot, F. Andrieu, M. Gaillardin, 2013, IEEE Transactions on Nuclear Science.

Stability of trapped electrons in SiO 2

Daniel M. Fleetwood, P. S. Winokur, O. Flament, 1999 .

A study of radiation vulnerability of ferroelectric material and devices

O. Musseau, J. L. Leray, J. Leray, 1994 .

CMOS/SOI hardening at 100 Mrad (SiO/sub 2/)

B. Giffard, Michel Bruel, J. Margail, 1990 .

Chapter 11 Defects and radiation-induced charge-trapping phenomena in SiO2

P. Paillet, J. L. Leray, J. Leray, 1999 .

Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

J. L. Pelloie, C. Cirba, A. Michez, 1996 .

Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor

J. L. Pelloie, C. Raynaud, V. Ferlet-Cavrois, 1997 .

DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics

Eric Delagnes, B. Paul, D. Lachartre, 1995 .

Worst-case bias during total dose irradiation of SOI transistors

J. L. Pelloie, Marty R. Shaneyfelt, J. R. Schwank, 2000 .

Total dose induced latch in short channel NMOS/SOI transistors

Olivier Faynot, J. L. Pelloie, C. Raynaud, 1998 .

Evidence of negative charge trapping in high temperature annealed thermal oxide

P. Paillet, J. L. Leray, J. Leray, 1994 .

High Total Ionizing Dose and Temperature Effects on Micro- and Nano-Electronic Devices

O. Faynot, F. Andrieu, M. Gaillardin, 2013, IEEE Transactions on Nuclear Science.

From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena

A. Umbert, B. Giffard, Michel Bruel, 1988 .

Radiation-induced interface traps in hardened MOS transistors: an improved charge-pumping study

O. Flament, J.-C. Boudenot, P. Paillet, 1996 .

Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 2000 .

Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures

William L. Warren, Jianbin Xu, P. Paillet, 1995 .