J. Liu

Measurement of the temperature dependence of pulse lengths in an n-type germanium detector

I. Abt, A. Caldwell, B. Majorovits, 2011, 1112.5033.

Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case

Hou-zhi Zheng, S. Chua, Shijie Xu, 1996 .

Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric

J. Kwo, H. Wan, M. Hong, 2021, Japanese Journal of Applied Physics.

Attainment of nearly thermally limited subthreshold slope in GaAs MOSFETs with in-situ Y2O3gate dielectric for cryogenic electronics

J. Kwo, H. Wan, M. Hong, 2023, 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).

Effect of mechanical stress on LDMOSFETs: Dependence on orientation and gate bias

S. Thompson, M. Chu, R. Wise, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.