Paul Hui

Approach to the silicon limit: Advanced NLDMOS in 0.13 μm SOI technology for automotive and industrial applications up to 110V

Pete Rodriquez, Zhihong Zhang, Jiangkai Zuo, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Combined Lateral Vertical RESURF (CLAVER) LDMOS structure

Pete Rodriquez, Ronghua Zhu, Vishnu Khemka, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.