Yaohua Tan

Toward deterministic construction of low noise avalanche photodetector materials

Min Ren, Yuan Yuan, Seth R. Bank, 2018 .

A Two-Dimensional Analysis Method on STI-Aware Layout-Dependent Stress Effect

Zuochang Ye, Yan Wang, Xiaojian Li, 2012, IEEE Transactions on Electron Devices.

A 2D Analysis Method on STI-Aware Layout Dependent Stress Effect

Yan Wang, Zuochang Ye, Xiaojian Li, 2012 .

A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach

Yan Wang, Zhiping Yu, Ximeng Guan, 2007 .

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

Gerhard Klimeck, Joerg Appenzeller, Hesameddin Ilatikhameneh, 2015, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass

Gerhard Klimeck, Hesameddin Ilatikhameneh, Yaohua Tan, 2016, Scientific Reports.

Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

Zhiping Yu, Xiaojian Li, Lilin Tian, 2008, IEEE Transactions on Electron Devices.

Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction

Patrick Fay, Gerhard Klimeck, Yeqing Lu, 2015, IEEE Transactions on Electron Devices.

Computational Search for Ultrasmall and Fast Skyrmions in the Inverse Heusler Family

Yunkun Xie, Avik W. Ghosh, Yaohua Tan, 2019, IEEE Transactions on Magnetics.

Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

Gerhard Klimeck, Michael Povolotskyi, Yaohua Tan, 2012, 1210.8215.