R. Baird

Suppression of substrate injection by RESURF LDMOS devices in a smart power technology for 20-30 V applications

V. Parthasarathy, R. Zhu, J. Capilla, 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

ion of substrate injection by RESURF s in a smart power technology for 20-30V L a p pl i cat i o n s

V. Parthasarathy, R. Zhu, J. Capilla, 1998 .

High-performance 13-65 V rated LDMOS transistors in an advanced smart power technology

Steven L. Merchant, V. Macary, R. Baird, 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

A 0.35 /spl mu/m CMOS based smart power technology for 7 V-50 V applications

Ronghua Zhu, V. Parthasarathy, V. Khemka, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

A 65 V, 0.56 m/spl Omega/.cm/sup 2/ Resurf LDMOS in a 0.35 /spl mu/m CMOS process

Ronghua Zhu, V. Parthasarathy, V. Khemka, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

High performance 20-30 V LDMOS transistors in a 0.65 /spl mu/m-based BiCMOS compatible process

P. Hui, Rainer Thoma, R. Baird, 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.