T. Ohmi

Measurement Of Adsorbed Moisture Concentration On Various Kinds Of Solid Surfaces By Using Anhydrous Hydrogen Fluoride

H. Izumi, Y. Nakagawa, S. Miyoshi, 1994, International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM.

Dependence of Thin Oxide Films Quality on Surface Micro-Roughness

Masayuki Miyashita, Tadahiro Ohmi, I. Kawanabe, 1991, 1991 Symposium on VLSI Technology.

Reduction of plasma-induced gate oxide damage using low-energy large-mass ion bombardment in gate-metal sputtering deposition

T. Ohmi, Mo-Chiun Yu, M. Morita, 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).

Highly-reliable ultra-thin oxide formation using hydrogen-radical-balanced steam oxidation technology

T. Ohmi, K. Nakamura, K. Makihara, 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.