C. Falt

A 22GS/s 5b adc in 0.13/spl mu/m SiGe BiCMOS

P. Schvan, D. Pollex, Shing-Chi Wang, 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

A Ka-band GaInP/GaAs HBT four-stage LNA

C. Falt, Y. Jamani, Alois P. Freundorfer, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

An accurate on-wafer deembedding technique with application to HBT devices characterization

Fadhel M. Ghannouchi, Ammar B. Kouki, S. Bousnina, 2002 .