Y. H. Wang

3D Integration of Vertical-Stacking of MoS2 and Si CMOS Featuring Embedded 2T1R Configuration Demonstrated on Full Wafers

C. Yao, C. Su, T. Hong, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Demonstration of Mos2 Memtransistor with Poly-Si Source/Drain Featuring Tunable Conductance States and Boosted ION

Y. Tseng, M. K. Huang, Y. H. Wang, 2023, IEEE Electron Devices Technology and Manufacturing Conference.