R. Johnson

发表

Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

R. S. Johnson, G. Lucovsky, Isreal Baumvol, 2001 .

Electronic structure of noncrystalline transition metal silicate and aluminate alloys

H. Ade, G. Lucovsky, D. Sayers, 2001 .

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)x(Al2O3)1−x alloys

R. S. Johnson, G. Lucovsky, J. G. Hong, 2001 .

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

R. S. Johnson, G. Lucovsky, H. Niimi, 2000 .

Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal–oxide–semiconductor devices

R. S. Johnson, V. Misra, G. Lucovsky, 2001 .

Reliability degradation of ultra-thin oxynitride and Al/sub 2/O/sub 3/ gate dielectric films owing to heavy-ion irradiation

R. S. Johnson, peixiong zhao, D. Fleetwood, 2002 .

INTERFACE ELECTRONIC STRUCTURE OF TA2O5-AL2O3 ALLOYS FOR SI-FIELD-EFFECT TRANSISTOR GATE DIELECTRIC APPLICATIONS

R. S. Johnson, G. Lucovsky, T. Madey, 2002 .